FDV303N
Manufacturer:
On Semiconductor
Mfr.Part #:
FDV303N
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 350 mW 25 V Continuous Drain Current (ID):680 mA 2.3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 25 V |
| Length | 2.92 mm |
| Width | 3.05 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 450 mΩ |
| Height | 930 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 20 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 12 A |
| Current Rating | 680 mA |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 350 mW |
| Power Dissipation | 350 mW |
| Threshold Voltage | 800 mV |
| Number of Channels | 1 |
| Input capacitance | 50 pF |
| Continuous Drain Current (ID) | 680 mA |
| Rds On Max | 450 mΩ |
| Drain to Source Voltage (Vdss) | 25 V |
| Turn-On Delay Time | 3 ns |
| Turn-Off Delay Time | 17 ns |
| Element Configuration | Single |
| Rise Time | 8.5 ns |
| Dual Supply Voltage | 25 V |
| Gate Charge | 2.3 nC |
| Drain to Source Resistance | 450 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 800 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 650 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 54285
Distributors
pcbx
pcbxUnit Price$0.09274
Ext.Price$0.09274
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.09274 | $0.09274 |
| 10 | $0.04637 | $0.46370 |
| 50 | $0.04156 | $2.07800 |
| 100 | $0.03725 | $3.72500 |
| 500 | $0.03435 | $17.17500 |
| 1000 | $0.03167 | $31.67000 |
| 3000 | $0.02920 | $87.60000 |
| 5000 | $0.02479 | $123.95000 |